PowerBrane technology
CamSemi is developing PowerBrane – a unique and patented technology which allows near-ideal performance switching of power devices such as LIGBTs and MOSFETs to minimise conduction and switching losses compared with today’s integrated solutions.
This breakthrough approach uses a CMOS-compliant deep back etch process step to selectively remove the silicon substrate under the buried oxide. This results in an ultra-thin, isolating membrane that increases voltage handling dramatically and reduces capacitance between the drain and substrate to increase switching speeds. It is also the first time that such process steps normally associated with MEMS have been used to enhance the performance of an active electronic device.
PowerBrane uses established manufacturing processes to integrate these ultra high-speed, high-voltage power switches together with complex control circuits onto one chip.
Creating ultra-fast LIGBTs
Using PowerBrane technology, CamSemi has developed ultra high-speed LIGBTs offering:
- breakdown voltage to 700 V;
- three-fold increase in current density over integrated LDMOS FETs;
- and up to 10-fold increase in switching frequency to 500 kHz. This is the world’s fastest integrated LIGBT, switching faster than today’s state-of-the-art discrete MOSFETs.
Designers of power-conversion products can now exploit the real technical and commercial benefits of LIGBTs for the first time. The result will be smaller, lighter and lower cost power converters with lower conduction and switching losses than existing power ICs.
PowerBrane is one of a number of approaches and technologies CamSemi is bringing to market to help the world’s electronics manufacturers develop more energy-efficient power conversion products.
Our solutions make it easier, faster and lower cost to comply with codes of conduct and regulations for efficiency and standby.
